Invention Grant
US09280052B2 Substrate treatment method, non-transitory computer storage medium and substrate treatment system
有权
底物处理方法，非暂时性计算机存储介质和底物处理系统
- Patent Title: Substrate treatment method, non-transitory computer storage medium and substrate treatment system
- Patent Title (中): 底物处理方法，非暂时性计算机存储介质和底物处理系统
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Application No.: US14177322Application Date: 2014-02-11
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Publication No.: US09280052B2Publication Date: 2016-03-08
- Inventor: Fumiko Iwao , Satoru Shimura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2013-044421 20130306
- Main IPC: G03F7/38
- IPC: G03F7/38 ; G03F7/26 ; H01L21/027 ; H01L21/67
Abstract:
The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.
Public/Granted literature
- US20140255852A1 SUBSTRATE TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM Public/Granted day:2014-09-11
Information query
IPC分类:
