Invention Grant
US09280455B2 Memory control device, non-volatile memory, and memory control method
有权
存储器控制器,非易失性存储器和存储器控制方法
- Patent Title: Memory control device, non-volatile memory, and memory control method
- Patent Title (中): 存储器控制器,非易失性存储器和存储器控制方法
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Application No.: US13945987Application Date: 2013-07-19
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Publication No.: US09280455B2Publication Date: 2016-03-08
- Inventor: Naohiro Adachi , Keiichi Tsutsui , Ken Ishii , Hideaki Okubo , Kenichi Nakanishi , Yasushi Fujinami , Tatsuo Shinbashi , Lui Sakai , Ryoji Ikegaya
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Hazuki International, LLC
- Priority: JP2012-184742 20120824
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/00 ; G11C13/00

Abstract:
Provided is a memory control device, including a write control unit that sequentially designates a memory block, a write processing unit that writes write data in the designated memory block, a verifying unit that reads read data from the memory block and verifies whether or not the read data matches the write data for each of a plurality of memory cells, a retry inhibiting unit that inhibits a retry process from being performed in a memory cell in which the read data matches the write data among the plurality of memory cells, and a retry control unit that designates at least some memory blocks among the plurality of memory blocks and simultaneously executes the retry process when the read data does not match the write data in any one of the plurality of memory cells in which all the write data is written.
Public/Granted literature
- US20140059268A1 MEMORY CONTROL DEVICE, NON-VOLATILE MEMORY, AND MEMORY CONTROL METHOD Public/Granted day:2014-02-27
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