Invention Grant
US09280497B2 Systems and methods for support of non-volatile memory on a DDR memory channel
有权
用于在DDR存储器通道上支持非易失性存储器的系统和方法
- Patent Title: Systems and methods for support of non-volatile memory on a DDR memory channel
- Patent Title (中): 用于在DDR存储器通道上支持非易失性存储器的系统和方法
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Application No.: US13723695Application Date: 2012-12-21
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Publication No.: US09280497B2Publication Date: 2016-03-08
- Inventor: Stuart Allen Berke , Shawn J. Dube
- Applicant: Stuart Allen Berke , Shawn J. Dube
- Applicant Address: US TX Round Rock
- Assignee: Dell Products LP
- Current Assignee: Dell Products LP
- Current Assignee Address: US TX Round Rock
- Agency: Egan, Peterman & Enders LLP.
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F13/16 ; G06F12/08

Abstract:
Systems and methods are provided for supporting use of non-volatile memory (NVM) on a double data rate (DDR) memory channel for an information handling system so that non-volatile memory devices (e.g., such as Phase Change Memory “PCM” devices) may be employed for main memory usage. In one possible implementation, information handling system memory reads may be managed directly in hardware as memory semantics via use code, while memory writes may be separately handled, e.g., via an operating system (OS)/driver. In another possible implementation, both DRAM-based and NVM-based memory systems may be populated for an information handling system.
Public/Granted literature
- US20140181364A1 Systems And Methods For Support Of Non-Volatile Memory On A DDR Memory Channel Public/Granted day:2014-06-26
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