Invention Grant
- Patent Title: Content addressable memory
- Patent Title (中): 内容可寻址内存
-
Application No.: US14279406Application Date: 2014-05-16
-
Publication No.: US09280633B2Publication Date: 2016-03-08
- Inventor: Young Seog Kim , Kuoyuan Hsu , Jacklyn Chang
- Applicant: Young Seog Kim , Kuoyuan Hsu , Jacklyn Chang
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G06F17/50 ; G11C15/04 ; H03K19/20

Abstract:
A method of designing a content-addressable memory (CAM) includes associating CAM cells with a summary circuit. The summary circuit includes a first level of logic gates and a second level of logic gates. The first level of logic gates have inputs each configured to receive an output of a corresponding one of the plurality of CAM cell. The second level of logic gates have inputs each configured to receive an output of a corresponding one of the first level of logic gates. Logic gates in at least one of the first level of logic gates or the second level of logic gates are selected to have an odd number of input pins so that an input pin and an output pin share a layout sub-slot.
Public/Granted literature
- US20140250416A1 CONTENT ADDRESSABLE MEMORY Public/Granted day:2014-09-04
Information query