Invention Grant
US09280634B1 Regularization method for quantizing lithography masks 有权
用于量化光刻掩模的正则化方法

  • Patent Title: Regularization method for quantizing lithography masks
  • Patent Title (中): 用于量化光刻掩模的正则化方法
  • Application No.: US14231276
    Application Date: 2014-03-31
  • Publication No.: US09280634B1
    Publication Date: 2016-03-08
  • Inventor: P. Jeffrey Ungar
  • Applicant: D2S, Inc.
  • Applicant Address: US CA San Jose
  • Assignee: D2S, Inc.
  • Current Assignee: D2S, Inc.
  • Current Assignee Address: US CA San Jose
  • Agency: The Mueller Law Office, P.C.
  • Main IPC: G06F17/50
  • IPC: G06F17/50
Regularization method for quantizing lithography masks
Abstract:
In an electronic design automation technique for optical proximity correction, an optimized mask function that has values other than those allowed for a particular mask type, such as 0 and 1 for a chrome-on-glass binary mask, evolves it to a solution restricted to these values or narrow intervals near them. The technique “regularizes” the solution by mixing in a new cost functional that encourages the mask to assume the desired values. The mixing in may be done over one or more steps or even “quasistatically,” in which the total cost functional and the mask is brought from pure goodness-of-fit to the printed layout for given conditions to pure manufacturability by keeping the total cost functional minimized step-by-step. A goal of this gradual mixing-in is to do thermodynamically optimal work on the mask function to bring it to manufacturable values.
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