Invention Grant
US09281028B1 Method and circuit for glitch reduction in memory read latch circuit
有权
存储器读锁存电路中毛刺减少的方法和电路
- Patent Title: Method and circuit for glitch reduction in memory read latch circuit
- Patent Title (中): 存储器读锁存电路中毛刺减少的方法和电路
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Application No.: US14603408Application Date: 2015-01-23
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Publication No.: US09281028B1Publication Date: 2016-03-08
- Inventor: Taejin Pyon , Yong Qin , Thu Hanh Nguyen
- Applicant: Oracle International Corporation
- Applicant Address: US CA Redwood Shores
- Assignee: Oracle International Corporation
- Current Assignee: Oracle International Corporation
- Current Assignee Address: US CA Redwood Shores
- Agency: Meyertons Hood Kivlin Kowert & Goetzel
- Agent Erik A. Heter
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; G11C7/12

Abstract:
A method and circuit for reducing a glitch in a memory read latch is disclosed. A read latch circuit includes a first logic gate having a first input coupled to a read bit line and a second input. The read latch circuit further includes a second logic gate coupled to receive as inputs a first enable signal and a delayed version of the first enable signal. The second logic gate is configured to provide a second enable signal to the second input of the first logic gate. The second logic gate is configured to provide a rising edge of the second enable signal after a predetermined delay without a corresponding delay of a falling edge of the second enable signal. The first logic gate provides an output corresponding to a data value received on the read bit line responsive to receiving the rising edge of the second enable signal.
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