Invention Grant
US09281028B1 Method and circuit for glitch reduction in memory read latch circuit 有权
存储器读锁存电路中毛刺减少的方法和电路

Method and circuit for glitch reduction in memory read latch circuit
Abstract:
A method and circuit for reducing a glitch in a memory read latch is disclosed. A read latch circuit includes a first logic gate having a first input coupled to a read bit line and a second input. The read latch circuit further includes a second logic gate coupled to receive as inputs a first enable signal and a delayed version of the first enable signal. The second logic gate is configured to provide a second enable signal to the second input of the first logic gate. The second logic gate is configured to provide a rising edge of the second enable signal after a predetermined delay without a corresponding delay of a falling edge of the second enable signal. The first logic gate provides an output corresponding to a data value received on the read bit line responsive to receiving the rising edge of the second enable signal.
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