A memory device comprises a memory array, at least one row address buffer, a set of row data buffers, a row decoder, an array of sense amplifiers, and a demultiplexer. The memory array comprises data elements organized into rows and columns. Each of the rows is addressable by a row address. Each of the data elements in each of the rows is addressable by a column address. The at least one row address buffer holds a selected row address of a set of successive selected row addresses. The set of row data buffers holds respective contents of selected rows that correspond to the set of successive selected row addresses. The row decoder decodes the selected row address to access a selected row. The array of sense amplifier reads the selected row and transmits content of the selected row to one of the row data buffers through the demultiplexer, and writes the content of the selected row back to the selected row.