Invention Grant
US09281042B1 Non-volatile memory using bi-directional resistive elements and capacitive elements
有权
使用双向电阻元件和电容元件的非易失性存储器
- Patent Title: Non-volatile memory using bi-directional resistive elements and capacitive elements
- Patent Title (中): 使用双向电阻元件和电容元件的非易失性存储器
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Application No.: US14572780Application Date: 2014-12-17
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Publication No.: US09281042B1Publication Date: 2016-03-08
- Inventor: Perry H. Pelley , Frank K. Baker, Jr. , Ravindraraj Ramaraju
- Applicant: Perry H. Pelley , Frank K. Baker, Jr. , Ravindraraj Ramaraju
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agency: The Mason Group Patent Specialists, LLC
- Agent Valerie M. Davis
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/16 ; G11C11/24
Abstract:
A memory cell includes a bi-directional resistive memory element, a first transistor, and a capacitive element. The bi-directional resistive memory element has a first terminal directly connected to a first power rail and a second terminal coupled to an internal node. The first transistor has a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to one of the first power rail, a second power rail, or a read wordline. The capacitive element includes a first terminal coupled to the internal node and a second terminal coupled to the read wordline.
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