Invention Grant
- Patent Title: Technique for optimizing static random-access memory passive power consumption
- Patent Title (中): 静态随机存取存储器无源功耗优化技术
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Application No.: US13680674Application Date: 2012-11-19
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Publication No.: US09281054B2Publication Date: 2016-03-08
- Inventor: Yongchang Huang , Jiping Ma , Xiangning Shi
- Applicant: NVIDIA Corporation
- Applicant Address: US CA Santa Clara
- Assignee: NVIDIA Corporation
- Current Assignee: NVIDIA Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Artegis Law Group, LLP
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C11/418 ; G11C8/08 ; G11C11/417 ; G11C11/408 ; G11C11/4091
Abstract:
A static read-only memory (SRAM) includes one or more bit cell rows that each includes a collection of bit cells. Each bit cell row is coupled to two or more different wordlines, where each wordline associated with a given bit cell row provides memory access to a different subset of bit cells within that bit cell row.
Public/Granted literature
- US20140143485A1 TECHNIQUE FOR OPTIMIZING STATIC RANDOM-ACCESS MEMORY PASSIVE POWER CONSUMPTION Public/Granted day:2014-05-22
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