Invention Grant
- Patent Title: Memory programming method and apparatus
- Patent Title (中): 存储器编程方法和装置
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Application No.: US14338426Application Date: 2014-07-23
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Publication No.: US09281075B2Publication Date: 2016-03-08
- Inventor: Beomseon Ryu , Taeil Yun , Daeyoung Yoo
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2013-0108737 20130910
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C17/18 ; G11C13/00 ; G11C17/14 ; G11C29/02 ; G11C29/44

Abstract:
The memory programming apparatus includes a memory reader configured to read a read data in a plurality of cells related with an address of a programmable memory; and a memory writer configured to record a write data on the plurality of cells to compare the write data with the read data, to generate a re-writing pattern, and to correct at least one mismatch cell among the plurality of cells. Accordingly, it may be possible to reduce a programming processing time and to increase a yield rate.
Public/Granted literature
- US20150070963A1 MEMORY PROGRAMMING METHOD AND APPARATUS Public/Granted day:2015-03-12
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