Invention Grant
US09281082B1 Semiconductor memory device including redundancy circuit and fuse circuit
有权
半导体存储器件包括冗余电路和熔丝电路
- Patent Title: Semiconductor memory device including redundancy circuit and fuse circuit
- Patent Title (中): 半导体存储器件包括冗余电路和熔丝电路
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Application No.: US14699707Application Date: 2015-04-29
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Publication No.: US09281082B1Publication Date: 2016-03-08
- Inventor: Sung-Yub Lee , Sung-Soo Chi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0183878 20141219
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C29/00 ; G11C17/16 ; G11C17/18 ; G11C29/04 ; G11C29/44

Abstract:
Disclosed herein is a fuse circuit including a storage unit capable of storing defective address information corresponding to mat information when a boot-up operation is performed, a driving control unit coupled between the storage unit and a first power source terminal, and capable of forming a current path between the storage unit and the first power source terminal in response to the defective address information transferred through a first data line and the mat information transferred through a second data line while blocking the current path between the storage unit and the first power source terminal when a normal operation is performed, and an output unit capable of outputting the defective address information stored in the storage unit when the normal operation is performed.
Information query