Invention Grant
US09281082B1 Semiconductor memory device including redundancy circuit and fuse circuit 有权
半导体存储器件包括冗余电路和熔丝电路

Semiconductor memory device including redundancy circuit and fuse circuit
Abstract:
Disclosed herein is a fuse circuit including a storage unit capable of storing defective address information corresponding to mat information when a boot-up operation is performed, a driving control unit coupled between the storage unit and a first power source terminal, and capable of forming a current path between the storage unit and the first power source terminal in response to the defective address information transferred through a first data line and the mat information transferred through a second data line while blocking the current path between the storage unit and the first power source terminal when a normal operation is performed, and an output unit capable of outputting the defective address information stored in the storage unit when the normal operation is performed.
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