Invention Grant
- Patent Title: Electrode structure of a laminated metallization film capacitor
- Patent Title (中): 层压金属化薄膜电容器的电极结构
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Application No.: US14362684Application Date: 2012-08-15
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Publication No.: US09281122B2Publication Date: 2016-03-08
- Inventor: Jian Zhu , Jintao Lin , Guobin Chen
- Applicant: Jian Zhu , Jintao Lin , Guobin Chen
- Applicant Address: CN Xiamen
- Assignee: XIAMEN FARATRONIC CO., LTD.
- Current Assignee: XIAMEN FARATRONIC CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Rabin & Berdo, P.C.
- Priority: CN201110408341 20111207
- International Application: PCT/CN2012/080132 WO 20120815
- International Announcement: WO2013/082951 WO 20130613
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/01 ; H01G4/30 ; H01G4/33 ; H01G4/012 ; H01G4/14

Abstract:
An electrode structure of a laminated metallization film capacitor includes at least two laminated metallization films. Each metallization film is further disposed with a plurality of metal-uncoated curved gap strips with a certain width on the plane of section of the laminated metallization film capacitor core to separate two adjacent metal coating units partially or totally. A center of the curved gas strip is concaved with a notch. Both sides of the notch form like misaligned shoulders. A projection forms opposite to the open of the notch; in two adjacent curve gap strips. An extreme point of the projection of one curve gap strip is disposed inside the notch of the other one in any event.
Public/Granted literature
- US20140301019A1 ELECTRODE STRUCTURE OF A LAMINATED METALLIZATION FILM CAPACITOR Public/Granted day:2014-10-09
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