Invention Grant
- Patent Title: Method for producing electrode material for vacuum circuit breaker, electrode material for vacuum circuit breaker and electrode for vacuum circuit breaker
- Patent Title (中): 真空断路器用电极材料的制造方法,真空断路器用电极材料及真空断路器用电极
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Application No.: US13806568Application Date: 2011-06-20
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Publication No.: US09281136B2Publication Date: 2016-03-08
- Inventor: Yasushi Noda , Hiromasa Sato
- Applicant: Yasushi Noda , Hiromasa Sato
- Applicant Address: JP Tokyo
- Assignee: Meidensha Corporation
- Current Assignee: Meidensha Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2010-143243 20100624; JP2010-284649 20101221
- International Application: PCT/JP2011/064608 WO 20110620
- International Announcement: WO2011/162398 WO 20111229
- Main IPC: B22F3/26
- IPC: B22F3/26 ; H01H1/02 ; C22C1/04 ; C22C9/00 ; C22C27/04 ; C22C30/02 ; H01B1/02 ; H01B13/00 ; H01H1/06 ; H01H33/664

Abstract:
The electrode material for a vacuum circuit breaker is produced by a method comprising a mixing step, a press sintering step, and a Cu infiltration step. In the mixing step, an Mo powder having a particle diameter of 0.8 to 6 μm is homogeneously mixed with a thermite Cr powder having a particle diameter of 40 to 300 μm in such a manner as giving a mixing ratio (Mo:Cr) of 1:1 to 9:1 and satisfying the weight relation Mo≧Cr. In the press sintering step, the resultant mixture is pressure molded under a press pressure of 1 to 4 t/cm2 to give a molded article. Next, said molded article is sintered by maintaining the same at a temperature of 1100 to 1200° C. for 1 to 2 hours in an heating furnace to give a partially sintered article. In the Cu infiltration step, a thin Cu plate is placed on said partially sintered article and maintained at a temperature of 1100 to 1200° C. for 1-2 hours in a heating furnace so that Cu is liquid-phase sintered and infiltrated into the partially sintered article. A contact material of an electrode for a vacuum circuit breaker has an integral structure consisting of a central member and a Cu—Cr outer peripheral member, said central member having been produced as described above and comprising 30 to 50 wt % of Cu of a particle diameter of 20 to 150 μm and 50 to 70 wt % of Mo—Cr of a particle diameter of 1 to 5 μm, while said outer peripheral member being formed of a material, which is highly compatible with the central member, shows excellent interruption performance and has high withstand voltage, and being provided outside the central member and fixed thereto.
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