Invention Grant
US09281154B2 Microwave introducing mechanism, microwave plasma source and microwave plasma processing apparatus
有权
微波引入机构,微波等离子体源和微波等离子体处理装置
- Patent Title: Microwave introducing mechanism, microwave plasma source and microwave plasma processing apparatus
- Patent Title (中): 微波引入机构,微波等离子体源和微波等离子体处理装置
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Application No.: US13789115Application Date: 2013-03-07
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Publication No.: US09281154B2Publication Date: 2016-03-08
- Inventor: Taro Ikeda , Yuki Osada , Shigeru Kasai , Hiroyuki Miyashita
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Minato-ku
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-201970 20100909; JP2011-058407 20110316
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J23/00 ; C23C16/455 ; C23C16/511 ; H01J37/32 ; H05H1/46

Abstract:
The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.
Public/Granted literature
- US20130180661A1 MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS Public/Granted day:2013-07-18
Information query
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