Invention Grant
US09281181B2 Film forming method and recording medium for performing the method
有权
薄膜形成方法和用于执行该方法的记录介质
- Patent Title: Film forming method and recording medium for performing the method
- Patent Title (中): 薄膜形成方法和用于执行该方法的记录介质
-
Application No.: US14582646Application Date: 2014-12-24
-
Publication No.: US09281181B2Publication Date: 2016-03-08
- Inventor: Atsushi Sano , Yoshiro Hirose
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-271388 20131227
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/00 ; H01L21/02 ; C23C16/30 ; C23C16/455 ; C23C16/507
Abstract:
A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film.
Public/Granted literature
- US20150187559A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2015-07-02
Information query
IPC分类:
