A method for preparing a semiconductor with preapplied underfill comprises providing a semiconductor wafer with a plurality of metallic bumps on its top side and, optionally, through-silica-vias vertically through the silicon wafer; laminating a back grinding tape to the top of the wafer covering the metallic bumps and through silicon vias; thinning the back side of the wafer; mounting a dicing tape to the back side of the thinned wafer and mounting the silicon wafer and dicing tape to a dicing frame; removing the back grinding tape; providing an underfill material precut into the shape of the wafer; aligning the underfill on with the wafer and laminating the underfill to the wafer.