Invention Grant
- Patent Title: Fabrication method of nitride forming on silicon substrate
- Patent Title (中): 在硅衬底上形成氮化物的方法
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Application No.: US13442885Application Date: 2012-04-10
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Publication No.: US09281184B2Publication Date: 2016-03-08
- Inventor: Chih-Chung Yang , Chih-Yen Chen
- Applicant: Chih-Chung Yang , Chih-Yen Chen
- Applicant Address: TW Taipei
- Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Taipei
- Agency: Jianq Chyun IP Office
- Priority: TW101105082A 20120216
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02
Abstract:
The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.
Public/Granted literature
- US20130217212A1 FABRICATION METHOD OF NITRIDE FORMING ON SILICON SUBSTRATE Public/Granted day:2013-08-22
Information query
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