Invention Grant
- Patent Title: Apparatus and method for fabricating wafer
- Patent Title (中): 晶圆制造装置及方法
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Application No.: US14235354Application Date: 2012-07-26
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Publication No.: US09281188B2Publication Date: 2016-03-08
- Inventor: Seok Min Kang , Moo Seong Kim
- Applicant: Seok Min Kang , Moo Seong Kim
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0074804 20110727
- International Application: PCT/KR2012/005967 WO 20120726
- International Announcement: WO2013/015631 WO 20130131
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; C30B33/02 ; C30B35/00 ; C23C16/54
Abstract:
A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part.
Public/Granted literature
- US20140170838A1 APPARATUS AND METHOD FOR FABRICATING WAFER Public/Granted day:2014-06-19
Information query
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