Invention Grant
- Patent Title: Epitaxial substrate for solid-state imaging device with gettering sink, semiconductor device, back illuminated solid-state imaging device and manufacturing method thereof
- Patent Title (中): 具有吸收槽，半导体器件，背照式固态成像器件的固态成像器件的外延衬底及其制造方法
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Application No.: US13124578Application Date: 2009-10-16
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Publication No.: US09281197B2Publication Date: 2016-03-08
- Inventor: Kazunari Kurita
- Applicant: Kazunari Kurita
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JPP2008-267341 20081016; JPP2008-267342 20081016; JPP2008-267343 20081016; JPP2009-069601 20090323
- International Application: PCT/JP2009/005428 WO 20091016
- International Announcement: WO2010/044279 WO 20100422
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L21/268 ; H01L21/322 ; H01L27/146 ; C30B29/06
Abstract:
A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens ofμm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.
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