Invention Grant
- Patent Title: Method of manufacturing semiconductor device having metal gate
- Patent Title (中): 制造具有金属栅极的半导体器件的方法
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Application No.: US14029824Application Date: 2013-09-18
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Publication No.: US09281201B2Publication Date: 2016-03-08
- Inventor: Ted Ming-Lang Guo , Chiu-Hsien Yeh , Chin-Cheng Chien , Chun-Yuan Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/8238 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/321 ; H01L21/3213
Abstract:
A method of manufacturing a semiconductor device having a metal gate is provided. A substrate having a first conductive type transistor and a second conductive type transistor formed thereon is provided. The first conductive type transistor has a first trench and the second conductive type transistor has a second trench. A first work function layer is formed in the first trench. A hardening process is performed for the first work function layer. A softening process is performed for a portion of the first work function layer. A pull back step is performed to remove the portion of the first work function layer. A second work function layer is formed in the second trench. A low resistive metal layer is formed in the first trench and the second trench.
Public/Granted literature
- US20150079777A1 Method of Manufacturing Semiconductor Device Having Metal Gate Public/Granted day:2015-03-19
Information query
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