Invention Grant
- Patent Title: Method for etching an ultra thin film
- Patent Title (中): 蚀刻超薄膜的方法
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Application No.: US14148397Application Date: 2014-01-06
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Publication No.: US09281205B2Publication Date: 2016-03-08
- Inventor: Chia-Chu Liu , Kuei-Shun Chen , Shang-Wern Chang , Chih-Yang Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; C03C15/00 ; C03C25/68 ; C25F3/00 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; C09K13/00 ; C09K13/02 ; C09K13/06 ; H01L21/308
Abstract:
A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.
Public/Granted literature
- US20140106566A1 Method For Etching an Ultra Thin Film Public/Granted day:2014-04-17
Information query
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