Invention Grant
- Patent Title: Nanoscale interconnect structure
- Patent Title (中): 纳米级互连结构
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Application No.: US14176228Application Date: 2014-02-10
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Publication No.: US09281211B2Publication Date: 2016-03-08
- Inventor: Chih-Chao Yang , Stephan A. Cohen , Eric G. Liniger
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/311 ; H01L21/768 ; H01L23/532
Abstract:
An interconnect structure includes a first dielectric material having an undercut region located at an upper surface thereof. A first conductive structure is located above a first area of the undercut region. The first conductive structure comprises a first conductive metal portion having a diffusion barrier portion located on one sidewall surface of the first conductive metal portion and having a metal liner located on another sidewall surface and a bottom surface of the first conductive metal portion. A second conductive structure is located above a second area of the undercut region. The second conductive structure comprises a second conductive material portion having a diffusion barrier portion located on one sidewall surface of the second conductive material portion and having a metal liner located on another sidewall surface and a bottom surface of the second conductive metal portion. A gap is located between the first and second conductive structures.
Public/Granted literature
- US20150228572A1 NANOSCALE INTERCONNECT STRUCTURE Public/Granted day:2015-08-13
Information query
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