Method of manufacturing semiconductor memory device

Invention Grant

US09281217B1 Method of manufacturing semiconductor memory device 有权

Title translation: 制造半导体存储器件的方法

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Patent Title: Method of manufacturing semiconductor memory device
Patent Title (中): 制造半导体存储器件的方法
Application No.: US14724517

Application Date: 2015-05-28
Publication No.: US09281217B1

Publication Date: 2016-03-08
Inventor: Sung Wook Jung , Ji Hui Baek , Dong Hun Lee , Tae Hwa Lee , Hye Eun Heo
Applicant: SK hynix Inc.
Applicant Address: KR Gyeonggi-do
Assignee: SK Hynix Inc.
Current Assignee: SK Hynix Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: IP & T Group LLP
Priority: KR10-2015-0000885 20150105
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/311 ; H01L21/4757 ; H01L27/115

Method of manufacturing semiconductor memory device

Abstract:

A method of manufacturing a semiconductor memory device includes forming a first attached layer on a substrate, forming a stack layer on the first attached layer, separating the stack layer and the first attached layer from each other, forming vertical holes by performing a first etch process on the stack layer in a direction from bottom to top, removing the first attached layer, attaching the stack layer in which the vertical holes are formed to the substrate, and performing a second etch process so that each of the vertical holes has a uniform width.

Abstract(Chinese):

一种制造半导体存储器件的方法包括在衬底上形成第一附着层，在第一附着层上形成堆叠层，将堆叠层和第一附着层彼此分开，通过执行第一蚀刻工艺形成垂直孔在堆叠层上从底部到顶部的方向移除第一附着层，将其中形成垂直孔的堆叠层附着到基板上，并执行第二蚀刻工艺，使得每个垂直孔具有均匀的宽度。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）