Invention Grant
US09281228B2 Semiconductor device and method of forming thermal interface material and heat spreader over semiconductor die
有权
在半导体芯片上形成热界面材料和散热器的半导体器件和方法
- Patent Title: Semiconductor device and method of forming thermal interface material and heat spreader over semiconductor die
- Patent Title (中): 在半导体芯片上形成热界面材料和散热器的半导体器件和方法
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Application No.: US13287035Application Date: 2011-11-01
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Publication No.: US09281228B2Publication Date: 2016-03-08
- Inventor: DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
- Applicant: DaeSik Choi , JoungIn Yang , MinJung Kim , Sang Mi Park , MinWook Yu
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/683 ; H01L23/36 ; H01L23/42 ; H01L29/06 ; H01L25/065 ; H01L23/00
Abstract:
A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.
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