Invention Grant
- Patent Title: WLCSP interconnect apparatus and method
- Patent Title (中): WLCSP互连设备和方法
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Application No.: US13892685Application Date: 2013-05-13
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Publication No.: US09281234B2Publication Date: 2016-03-08
- Inventor: Jie Chen , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/31 ; H01L23/525

Abstract:
Disclosed herein is an interconnect apparatus comprising a substrate having a land disposed thereon and a passivation layer disposed over the substrate and over a portion of the land. An insulation layer is disposed over the substrate and has an opening disposed over at least a portion of the land. A conductive layer is disposed over a portion of the passivation layer and in electrical contact with the land. The conductive layer has a portion extending over at least a portion of the insulation layer. The conductive layer comprises a contact portion disposed over at least a portion of the land. The insulation layer avoids extending between the land and the contact portion. A protective layer may be disposed over at least a portion of the conductive layer and may optionally have a thickness of at least 7 μm.
Public/Granted literature
- US20140264884A1 WLCSP Interconnect Apparatus and Method Public/Granted day:2014-09-18
Information query
IPC分类: