Invention Grant
- Patent Title: Strain adjustment in the formation of MOS devices
- Patent Title (中): MOS器件形成中的应变调整
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Application No.: US13551413Application Date: 2012-07-17
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Publication No.: US09281246B2Publication Date: 2016-03-08
- Inventor: Yi-Wen Wang , Jen-Pan Wang
- Applicant: Yi-Wen Wang , Jen-Pan Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/8238 ; H01L29/78 ; H01L29/66
Abstract:
A method includes forming a gate stack over a semiconductor substrate, and forming a gate spacer on a sidewall of the gate stack. After the step of forming the gate spacer, the gate spacer is etched to reduce a thickness of the gate spacer. A strained layer is then formed. The strained layer includes a portion on an outer sidewall of the gate spacer, and a portion over the gate stack.
Public/Granted literature
- US20140021552A1 Strain Adjustment in the Formation of MOS Devices Public/Granted day:2014-01-23
Information query
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