Invention Grant
- Patent Title: Strained silicon and strained silicon germanium on insulator field-effect transistor
- Patent Title (中): 应变硅和应变硅锗绝缘体上的场效应晶体管
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Application No.: US13615016Application Date: 2012-09-13
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Publication No.: US09281247B2Publication Date: 2016-03-08
- Inventor: Stephen W. Bedell , Kangguo Cheng , Bruce Doris , Ali Khakifirooz , Devendra K. Sadana
- Applicant: Stephen W. Bedell , Kangguo Cheng , Bruce Doris , Ali Khakifirooz , Devendra K. Sadana
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: G03F1/36
- IPC: G03F1/36 ; H01L21/84 ; H01L21/8238 ; H01L27/12
Abstract:
A structure includes a tensilely strained NFET region including a strained silicon layer of a silicon on insulator wafer. A relaxed NFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer. A compressively strained PFET region includes a SiGe layer which was converted from a tensilely strained silicon layer of the silicon on insulator wafer. A relaxed PFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer.
Public/Granted literature
- US20140008729A1 STRAINED SILICON AND STRAINED SILICON GERMANIUM ON INSULATOR Public/Granted day:2014-01-09
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