Invention Grant
- Patent Title: Method for making contact with a semiconductor and contact arrangement for a semiconductor
- Patent Title (中): 与半导体接触的方法和用于半导体的接触装置
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Application No.: US14359630Application Date: 2012-11-20
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Publication No.: US09281270B2Publication Date: 2016-03-08
- Inventor: Eckart Geinitz , Gerhard Braun , Erik Sueske
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Michael Best & Friedrich LLP
- Priority: DE102011086687 20111121
- International Application: PCT/EP2012/073074 WO 20121120
- International Announcement: WO2013/076064 WO 20130530
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L21/768 ; H01L23/495
Abstract:
The invention relates to a method for making contact with a semiconductor (10), and to a contact arrangement (1) for a semiconductor (10), wherein the semiconductor (10) is a really connected to a first contact partner (20) at at least one first area by the formation of a first soldering layer (30) having a predefined thickness. According to the invention, a polyimide layer (14) is applied as delimiting means on the semiconductor (10), said polyimide layer predefining the dimensions and/or the form of at least one soldering area (12) of the semiconductor (10).
Public/Granted literature
- US20140299998A1 METHOD FOR MAKING CONTACT WITH A SEMICONDUCTOR AND CONTACT ARRANGEMENT FOR A SEMICONDUCTOR Public/Granted day:2014-10-09
Information query
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