Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
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Application No.: US14589539Application Date: 2015-01-05
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Publication No.: US09281291B2Publication Date: 2016-03-08
- Inventor: Masami Koketsu , Toshiaki Sawada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2008-032666 20080214
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/46 ; H01L23/00 ; H01L23/544 ; H01L23/58 ; H01L29/78 ; H01L23/535 ; H01L27/12

Abstract:
To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P1a is formed in the same layer as that of a second layer wiring and the pattern P1b is formed in the same layer as that of a first layer wiring. Further, the pattern P2 is formed in the same layer as that of a gate electrode, and the pattern P3 is formed in the same layer as that of an element isolation region.
Public/Granted literature
- US20150155257A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-06-04
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