Invention Grant
- Patent Title: Transistor assisted ESD diode
- Patent Title (中): 晶体管辅助ESD二极管
-
Application No.: US13709696Application Date: 2012-12-10
-
Publication No.: US09281304B2Publication Date: 2016-03-08
- Inventor: Mahalingam Nandakumar , Sunitha Venkataraman , David L. Catlett, Jr.
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/02
Abstract:
An integrated circuit includes a diode/bipolar ESD protection device. The diode/bipolar ESD device includes at least one gate separated ESD diode and at least one gate spaced ESD bipolar transistor coupled in parallel between a fixed voltage and an input/output pin.
Public/Granted literature
- US20130146978A1 TRANSISTOR ASSISTED ESD DIODE Public/Granted day:2013-06-13
Information query
IPC分类:
