Invention Grant
US09281307B2 Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
有权
等离子体掺杂以减少在栅极结构中去除虚设层时的介质损耗
- Patent Title: Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
- Patent Title (中): 等离子体掺杂以减少在栅极结构中去除虚设层时的介质损耗
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Application No.: US13854251Application Date: 2013-04-01
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Publication No.: US09281307B2Publication Date: 2016-03-08
- Inventor: Yu-Lien Huang , Chia-Pin Lin , Sheng-Hsiung Wang , Fan-Yi Hsu , Chun-Liang Tai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/51
Abstract:
A semiconductor device which includes a first gate structure on a substrate and a second gate structure on the substrate is provided. The semiconductor device further includes an inter-level dielectric (ILD) layer on the substrate between the first gate structure and the second gate structure, wherein a top portion of the ILD layer has a different etch selectivity than a bottom portion of the ILD layer.
Public/Granted literature
- US20130228871A1 PLASMA DOPING TO REDUCE DIELECTRIC LOSS DURING REMOVAL OF DUMMY LAYERS IN A GATE STRUCTURE Public/Granted day:2013-09-05
Information query
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