Invention Grant
- Patent Title: Light emitting device and fabricating method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13358266Application Date: 2012-01-25
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Publication No.: US09281341B2Publication Date: 2016-03-08
- Inventor: Hwan Hee Jeong
- Applicant: Hwan Hee Jeong
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2011-0007742 20110126
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L27/15 ; H01L27/12

Abstract:
Disclosed is a light emitting device including a support substrate, a transistor unit disposed at one side of the upper surface of the support substrate, a light emitting device unit disposed at the other side of the upper surface of the support substrate, and an insulating layer disposed between the transistor unit and the light emitting device unit and between the support substrate and the transistor unit and isolating the transistor unit from the light emitting device unit.
Public/Granted literature
- US20120187438A1 LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2012-07-26
Information query
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