According to an embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction orthogonal to the first direction. The device includes third wirings, and a first and a second memory. The third wirings extend in a third direction crossing the first direction and orthogonal to the second direction, and aligned in the second direction on both sides of the second wiring. The first memory is provided between one of third wiring pair and the second wiring, the pair of third wirings facing each other across the second wiring. The second memory is provided between another one of the third wiring pair and the second wiring. The second wiring has a block portion between a first portion in contact with the first memory and a second portion in contact with the second memory.