An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the same. The semiconductor structure includes a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. The bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer. The bottom plate further includes a conductive layer overlying the thin film layer. A second dielectric layer is disposed on the conductive layer of the bottom plate of the capacitor. A top plate of the capacitor is disposed on the second dielectric layer.