Invention Grant
- Patent Title: Semiconductor device comprising contact trenches
- Patent Title (中): 包括接触沟槽的半导体器件
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Application No.: US13589717Application Date: 2012-08-20
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Publication No.: US09281359B2Publication Date: 2016-03-08
- Inventor: Markus Zundel , Andreas Meiser , Hans-Peter Lang , Thorsten Meyer , Peter Irsigler
- Applicant: Markus Zundel , Andreas Meiser , Hans-Peter Lang , Thorsten Meyer , Peter Irsigler
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L21/762 ; H01L21/02 ; H01L23/48 ; H01L27/06 ; H01L29/417 ; H01L29/78 ; H01L21/74 ; H01L29/861 ; H01L21/8234 ; H01L29/40 ; H01L29/45
Abstract:
One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench.
Public/Granted literature
- US20140048904A1 Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof Public/Granted day:2014-02-20
Information query
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