FinFET with high breakdown voltage characteristics

Invention Grant

US09281399B2 FinFET with high breakdown voltage characteristics 有权

Title translation: FinFET具有高击穿电压特性

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Patent Title: FinFET with high breakdown voltage characteristics
Patent Title (中): FinFET具有高击穿电压特性
Application No.: US14716575

Application Date: 2015-05-19
Publication No.: US09281399B2

Publication Date: 2016-03-08
Inventor: Chia-Hsin Hu , Sun-Jay Chang
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/36 ; H01L27/088

FinFET with high breakdown voltage characteristics

Abstract:

A fin field effect transistor (FinFET) and a method of forming the same are introduced. In an embodiment, trenches are formed in a substrate, wherein a region between adjacent trenches defines a fin. A dielectric material is formed in the trenches. A part of the substrate is doped and a region of high dopant concentration and a region of low dopant concentration are formed. Gate stacks are formed, portions of the fins are removed and source/drain regions are epitaxially grown in the regions of high/low dopant concentration. Contacts are formed to provide electrical contacts to source/gate/drain regions.

Abstract(Chinese):

引入鳍状场效应晶体管（FinFET）及其形成方法。在一个实施例中，沟槽形成在衬底中，其中相邻沟槽之间的区域限定鳍。在沟槽中形成电介质材料。衬底的一部分被掺杂，并且形成高掺杂剂浓度的区域和低掺杂剂浓度的区域。形成栅极堆叠，去除部分散热片，并在高/低掺杂浓度的区域中外延生长源极/漏极区域。形成触点以提供与源极/栅极/漏极区域的电接触。

Public/Granted literature

US20150270396A1 FinFET Device and Method Public/Granted day:2015-09-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS