Invention Grant
- Patent Title: Methods of fabricating fin structures
- Patent Title (中): 翅片结构的制作方法
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Application No.: US14292443Application Date: 2014-05-30
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Publication No.: US09281402B2Publication Date: 2016-03-08
- Inventor: Sanh D. Tang , Gordon Haller
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/308 ; H01L29/66 ; H01L27/088 ; H01L29/06
Abstract:
There is provided fin methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins.
Public/Granted literature
- US20140346613A1 METHODS OF FABRICATING FIN STRUCTURES Public/Granted day:2014-11-27
Information query
IPC分类:
