Invention Grant
US09281404B2 Three-dimensional graphene switching device 有权
三维石墨烯开关装置

Three-dimensional graphene switching device
Abstract:
A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0