Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14337583Application Date: 2014-07-22
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Publication No.: US09281405B2Publication Date: 2016-03-08
- Inventor: Shinya Sasagawa , Hideomi Suzawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-282438 20111223; JP2011-282511 20111223
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L31/0288 ; H01L31/112 ; H01L29/786 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/10 ; H01L29/24 ; H01L29/423 ; H01L27/115
Abstract:
A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured.
Public/Granted literature
- US20140332801A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-11-13
Information query
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