Invention Grant
US09281445B2 Methods of fabricating light emitting diodes by masking and wet chemical etching
有权
通过掩蔽和湿化学蚀刻制造发光二极管的方法
- Patent Title: Methods of fabricating light emitting diodes by masking and wet chemical etching
- Patent Title (中): 通过掩蔽和湿化学蚀刻制造发光二极管的方法
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Application No.: US14519746Application Date: 2014-10-21
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Publication No.: US09281445B2Publication Date: 2016-03-08
- Inventor: Matthew Donofrio
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/32 ; H01L33/20 ; H01L33/42 ; H01L33/38 ; H01L33/00
Abstract:
An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
Public/Granted literature
- US20150037918A1 METHODS OF FABRICATING LIGHT EMITTING DIODES BY MASKING AND WET CHEMICAL ETCHING Public/Granted day:2015-02-05
Information query
IPC分类:
