Invention Grant
- Patent Title: Thin film light emitting diode
- Patent Title (中): 薄膜发光二极管
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Application No.: US13855637Application Date: 2013-04-02
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Publication No.: US09281454B2Publication Date: 2016-03-08
- Inventor: Myung Cheol Yoo
- Applicant: LG ELECTRONICS, INC.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Dentons US LLP
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/50 ; H01L23/00 ; H01L33/62

Abstract:
Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.
Public/Granted literature
- US20130292725A1 THIN FILM LIGHT EMITTING DIODE Public/Granted day:2013-11-07
Information query
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