Invention Grant
US09281486B2 Semiconductor device, method of manufacturing semiconductor device, solid-state imaging unit, and electronic apparatus
有权
半导体装置，半导体装置的制造方法，固态成像装置以及电子装置
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, solid-state imaging unit, and electronic apparatus
- Patent Title (中): 半导体装置，半导体装置的制造方法，固态成像装置以及电子装置
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Application No.: US14366054Application Date: 2012-11-20
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Publication No.: US09281486B2Publication Date: 2016-03-08
- Inventor: Kaori Takimoto , Tetsuji Yamaguchi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Hazuki International, LLC
- Priority: JP2011-285353 20111227
- International Application: PCT/JP2012/080064 WO 20121120
- International Announcement: WO2013/099475 WO 20130704
- Main IPC: H01L51/44
- IPC: H01L51/44 ; H01L27/30
Abstract:
A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer.
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Information query
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