Various configurations and arrangements of various communication devices are disclosed. Various integrated circuits that form these communication devices can be fabricated onto one or more semiconductor substrates, chips, and/or dies using a high voltage semiconductor process, a low voltage semiconductor process, or any combination thereof. Some of these high voltage and/or low voltage semiconductor process integrated circuits can be fabricated along with other high voltage and/or low voltage semiconductor process integrated circuits of other modules onto a single semiconductor substrate, chip, and/or die. This allows the low voltage semiconductor process integrated circuits and/or high voltage semiconductor process integrated circuits of one module to be combined with low voltage semiconductor process integrated circuits and/or high voltage semiconductor process integrated circuits of another module of the communication device.