Invention Grant
- Patent Title: Interposed substrate and manufacturing method thereof
- Patent Title (中): 基片及其制造方法
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Application No.: US14164245Application Date: 2014-01-26
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Publication No.: US09282646B2Publication Date: 2016-03-08
- Inventor: Dyi-Chung Hu , Ming-Chih Chen , Tzyy-Jang Tseng
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW101118578A 20120524
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K3/10 ; C25D1/00 ; H05K3/46 ; H05K3/42

Abstract:
A manufacturing method of an interposed substrate is provided. A metal-stacked layer comprising a first metal layer, an etching stop layer and a second metal layer is formed. A patterned conductor layer is formed on the first metal layer, wherein the patterned conductor layer exposes a portion of the first metal layer. A plurality of conductive pillars is formed on the patterned conductor layer, wherein the conductive pillars are separated from each other and stacked on a portion of the patterned conductor layer. An insulating material layer is formed on the metal-stacked layer, wherein the insulating material layer covers the portion of the first metal layer and encapsulates the conductive pillars and the other portion of the patterned conductor layer. The metal-stacked layer is removed to expose a lower surface opposite to an upper surface of the insulating material layer and a bottom surface of the patterned conductor layer.
Public/Granted literature
- US20140138142A1 INTERPOSED SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-05-22
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