Invention Grant
- Patent Title: Method for etching organic film and plasma etching device
- Patent Title (中): 蚀刻有机膜和等离子体蚀刻装置的方法
-
Application No.: US14385820Application Date: 2013-03-26
-
Publication No.: US09293346B2Publication Date: 2016-03-22
- Inventor: Hiroyuki Takaba , Hironori Matsuoka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-094048 20120417
- International Application: PCT/JP2013/058844 WO 20130326
- International Announcement: WO2013/157359 WO 20131024
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/311 ; H01L21/027 ; H01J37/32 ; H01L21/67
Abstract:
In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O2 gas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film.
Public/Granted literature
- US20150064924A1 METHOD FOR ETCHING ORGANIC FILM AND PLASMA ETCHING DEVICE Public/Granted day:2015-03-05
Information query
IPC分类:
