Provided are an apparatus, system, and method for performing an error recovery operation with respect to a read of a block of memory cells in a storage device. A current iteration of a decoding operation is performed by applying at least one reference voltage for the current iteration to a block of the memory cells in the storage device to determine current read values in response to applying the reference voltage. A symbol is generated for each of the read memory cells by combining the determined current read value with at least one value saved during the previous iteration. The symbols are used to determine bit reliability metrics for the block of memory cells. The bit reliability metrics are decoded. In response to the decoding failing, an additional iteration of the decoding operation is performed.