Invention Grant
- Patent Title: Write operations in spin transfer torque memory
- Patent Title (中): 在旋转转矩记忆中进行写操作
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Application No.: US14191191Application Date: 2014-02-26
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Publication No.: US09299412B2Publication Date: 2016-03-29
- Inventor: Helia Naeimi , Shih-Lien L. Lu , Charles Augustine
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Thorpe North & Western, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
In one embodiment, a controller comprises logic to identify a first plurality of cells in a row of spin transfer torque (STT) memory which are to be set to a parallel state and a second plurality of cells in the row of the STT memory which are to be set to an anti-parallel state, mask write operations to the second plurality of cells in the row, set the first plurality of cells to a parallel state, mask write operations to the first plurality of cells in the row, and set the second plurality of cells to an anti-parallel state.
Public/Granted literature
- US20150243335A1 WRITE OPERATIONS IN SPIN TRANSFER TORQUE MEMORY Public/Granted day:2015-08-27
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