Invention Grant
US09299474B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
有权
用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
- Patent Title: Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
- Patent Title (中): 用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
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Application No.: US13812277Application Date: 2011-07-28
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Publication No.: US09299474B2Publication Date: 2016-03-29
- Inventor: Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
- Applicant: Shinya Morita , Aya Miki , Yumi Iwanari , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Priority: JP2010-172868 20100730; JP2011-008323 20110118
- International Application: PCT/JP2011/067332 WO 20110728
- International Announcement: WO2012/014999 WO 20120202
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01L29/24 ; C23C14/08 ; H01L21/02 ; H01L29/786
Abstract:
There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
Public/Granted literature
- US20130119324A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR Public/Granted day:2013-05-16
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