Invention Grant
- Patent Title: Overcoming variance in stacked capacitors
- Patent Title (中): 克服堆叠电容器的变化
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Application No.: US13995140Application Date: 2011-12-14
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Publication No.: US09299505B2Publication Date: 2016-03-29
- Inventor: Eric C. Hannah , Cary L. Pint , Charles W. Holzwarth , John L. Gustafson
- Applicant: Eric C. Hannah , Cary L. Pint , Charles W. Holzwarth , John L. Gustafson
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/064969 WO 20111214
- International Announcement: WO2013/089710 WO 20130620
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01G11/04 ; H01G11/12 ; H01G11/14 ; H01G11/24 ; H01G11/84 ; H01G13/00

Abstract:
In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
Public/Granted literature
- US20140036412A1 OVERCOMING VARIANCE IN STACKED CAPACITORS Public/Granted day:2014-02-06
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