Invention Grant
- Patent Title: Process for silicon nitride removal selective to SiGex
- Patent Title (中): 对SiGex有选择性的氮化硅去除工艺
-
Application No.: US13834398Application Date: 2013-03-15
-
Publication No.: US09299570B2Publication Date: 2016-03-29
- Inventor: Jeffery W. Butterbaugh , Anthony S. Ratkovich
- Applicant: TEL FSI, Inc.
- Applicant Address: US MN Chaska
- Assignee: TEL FSI, Inc.
- Current Assignee: TEL FSI, Inc.
- Current Assignee Address: US MN Chaska
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/306 ; B81C1/00 ; H01L21/67 ; H01L21/3213 ; H01L21/311 ; H01L29/66 ; H01L29/78
Abstract:
A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGex (x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGex. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.
Public/Granted literature
- US20130203262A1 Process for Silicon Nitride Removal Selective to SiGex Public/Granted day:2013-08-08
Information query
IPC分类:
